Samsung Electronics pushed out Micron Technology and reclaimed second place in the high bandwidth memory (HBM) market in the third quarter of this year. After falling to third place behind Micron in the first and second quarters, the company showed a recovery trend as it expanded supply of HBM3E (5th generation) products. In the DRAM market as well, Samsung closely pursued leading SK Hynix.
According to market research firm Counterpoint Research on Dec. 19, Samsung Electronics’ global HBM market share (based on revenue) in the third quarter was recorded at 22%. This represents a sharp 7 percentage point surge compared to 15% in the previous quarter. During the same period, Micron recorded 21%, surrendering second place to Samsung Electronics.
SK Hynix defended its first-place position with a 57% market share. While it still dominates more than half the market, its dominance has somewhat weakened compared to 64% in the previous quarter. Samsung Electronics is evaluated as having laid the foundation for a rebound by overcoming the adverse factor of reduced exports to China and beginning full-scale supply of HBM3E products from the third quarter.
Samsung Electronics’ pursuit is also fierce in the overall DRAM market. In third quarter revenue-based DRAM market share, SK Hynix maintained first place at 34%, while Samsung Electronics closely followed at 33%. The gap between the two companies is just 1 percentage point. SK Hynix achieved the remarkable feat of overtaking Samsung Electronics for the first time in history to reach first place in DRAM revenue in the first quarter of this year. Samsung Electronics falling to second place after defending its semiconductor emperor position for 33 years since 1992 was an unprecedented event in semiconductor history. Samsung Electronics raised its market share from 32% in the second quarter to 33% in the third quarter, bringing the reclaim of first place within reach. Micron recorded third place with a 26% market share.
The DRAM market this quarter grew 26% compared to the previous quarter due to record price increases and increased supply volume. As the three memory companies reduced production of legacy DRAM, supply shortages occurred, leading to price increases.
Industry analysts expect competition for preempting the HBM4 market next year to accelerate further. Samsung Electronics is expanding HBM3E production capacity in the second half and accelerating development of next-generation products. SK Hynix is expected to focus all efforts on maintaining its HBM leadership.
